Investigating the Properties of Indium - Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates

RF-sputtered gallium tin zinc oxide (GSZO) thin films for application in transparent amorphous oxide semiconductors (TAOSs) have been investigated. Morphological, structural, electrical, optical properties and its mechanical robustness have been studied on polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The films deposited on PEN substrates retained amorphous structure even after annealing for 12 hours in vacuum at 200°C. The optical band edge is ~ 3.3eV, greater than ZnO films. Best μHall of 3 cm 2V-1s-1 have been observed on annealed GSZO films at 200°C. The critical radii of bending improve from 14.5mm to 11mm with decreasing RF power of deposition from 90W to 80W, indicative of its suitability for flexible electronics. *Corresponding author: Shanthi Iyer, Department of Electrical and Computer Engineering, North Carolina Agricultural & Technical State University, Greensboro, NC, USA 27411, E-mail: [email protected] Received Date: June 22, 2014 Accepted Date: June 25, 2014 Published Date: July 25, 2014 Citation: Shanthi, I., et al. Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates (2014) J Nanotech Mater Sci 1(1): 7-11. J Nanotech Mater Sci | volume 1: issue